Substrate for electro-optical device, electro-optical device, and electronic apparatus

ABSTRACT

An opposing substrate as a substrate for an electro-optical device includes a transparent base member and a light shielding portion disposed on a region between pixels on the base member. The light shielding portion includes a first reflective film and a second reflective film that is disposed to overlap the first reflective film and has a reflection rate lower than that of the first reflective film, and a first protective film that covers the first reflective film is provided between the first reflective film and the second reflective film.

This is a Divisional Application of application Ser. No. 15/848,608,filed Dec. 20, 2017, which is a Divisional Application of applicationSer. No. 15/193,266, filed Jun. 27, 2016, which claims priority to JP2015-192904, filed Sep. 30, 2015. The disclosures of the priorapplications are hereby incorporated by reference herein in theirentirety.

BACKGROUND 1. Technical Field

The present invention relates to a substrate for an electro-opticaldevice, and an electro-optical device and an electronic apparatus usingthe substrate for an electro-optical device.

2. Related Art

For example, as the electro-optical device, a liquid crystal device andan organic electroluminescence (EL) device or the like used in a displayunit, such as a portable information terminal, a note type personalcomputer, and the like are known. In the substrate for anelectro-optical device used in the electro-optical device, a lightshielding film, which is called a black matrix (BM) for partitioning aplurality of pixels, is provided. By providing the light shielding filmbetween pixels, light that leaks from between the pixels is blocked, andthus the reduction of contrast and color mixture are prevented andexcellent display is realized.

For example, in JP-A-2001-330821, the electro-optical device including apair of a first substrate and a second substrate is disclosed. Apredetermined pattern is provided in a non-opening region of each pixelof the first substrate, and the light shielding film is provided in aregion in which the predetermined pattern is at least partially coveredin a case of viewing the predetermined pattern in a plane manner, in thesecond substrate that is oppositely disposed to the first substrate. Thelight shielding film is formed by laminating a high reflective film of afirst reflection rate and a low reflective film of a second reflectionrate lower than the first reflection rate. There is an example that thehigh reflective film covers the low reflective film. By providing thelight shielding film on the second substrate, light incident on the highreflective film from the second substrate side is reflected. With this,it is unlikely for light to be incident on the non-opening region ofeach pixel. Meanwhile, it is unlikely for light, which is incident onthe opening region of each pixel, reflected from the first substrateside, and returned toward the second substrate, to be incident on andreflected from the low reflective film. That is, since internalreflection is reduced between the first substrate and the secondsubstrate which are oppositely disposed, it is possible to suppress thereduction of display quality caused by the internal reflection.

In the electro-optical device of JP-A-2001-330821, the predeterminedpattern functions as a pixel switching thin film transistor (TFT), scanlines and data lines connected to the TFT, or the like. In addition, thelight shielding film is provided in an island shape so as to overlap atleast the TFT in a plane manner, or provided in a stripe shape or alattice shape so as to overlap the scan lines and the data lines in aplane manner. As an example of the high reflective film constituting thelight shielding film, there is an aluminum film including nitrogencompounds and refractory metal, and as an example of the low reflectivefilm, there is a film including chromium oxide. As a method for formingthe light shielding film, first, the high reflective film is formed on asubstrate, and then patterning is performed on the high reflective filmcorresponding to the predetermined pattern. Accordingly, a method inwhich the low reflective film is formed to cover the high reflectivefilm on which the patterning is performed, and patterning is performedon the low reflective film again, is considered. However, whenpositional accuracy is not sufficiently secured in the patterning of thelow reflective film, there is a possibility that it may not reliablycover the high reflective film on which the patterning is performed. Inaddition, in etching processing of the patterning of the low reflectivefilm, there is a possibility that defects occur by etching a part of thehigh reflective film. In particular, when the size of a pixel is highdefinition, since the width of the non-opening region between pixels onwhich the predetermined pattern is provided also becomes narrower, highpositional accuracy is acquired in the patterning of the low reflectivefilm. When a portion of the high reflective film that is not covered bythe low reflective film exists, internal reflection in the portionbecomes remarkable and then there is a possibility that characteristicsof contrast or the like are partially reduced. In addition, when defectsoccur in a part of the high reflective film at the time of patterning ofthe low reflective film, there is a possibility that the reliability ofthe electro-optical device is impaired by diffusing the material of adefective high reflective film.

SUMMARY

The invention can be realized in the following aspects or applicationexamples.

Application Example

According to this application example, there is provided a substrate foran electro-optical device used in an electro-optical device including aplurality of pixels including: a transparent base member; and a lightshielding portion disposed on regions between pixels on the base member,in which the light shielding portion includes a first reflective filmand a second reflective film that is disposed by overlapping the firstreflective film and has a reflection rate lower than that of the firstreflective film, and in which a first protective film that covers thefirst reflective film is provided between the first reflective film andthe second reflective film.

In this application example, at the time of patterning the secondreflective film, by variation of position accuracy in patterning, evenwhen a part of the second reflective film is defective in portionscorresponding to regions between pixels, since the first reflective filmis covered by the first protective film, exposure or defects of a partof the first reflective film is prevented. That is, it is possible toprovide the substrate for an electro-optical device capable of reducingproblems of optical characteristics or reliability caused by defects orexposure in a part of the first reflective film in a region between thepixels.

In the substrate for an electro-optical device according to theapplication example, the first protective film may be formed frommaterial having approximately the same refractive rate as the basemember, and provided over at least a region including the plurality ofpixels on the base member.

In this configuration, it is possible to suppress the reduction oftransmissivity of light in pixels by providing the first protectivefilm.

In the substrate for an electro-optical device according to theapplication example, the first protective film may be disposed to belocated between the first reflective film and the second reflectivefilm.

In this configuration, since the first protective film is not requiredto be transparent, a selection range of material constituting the firstprotective film is widened.

In the substrate for an electro-optical device according to theapplication example, the second reflective film may include an eavesportion protruded from a region on which the first reflective film isprovided, in a planar manner on the base member.

In this configuration, it is possible to block, by using the eavesportion, a part of light incident on the base member from an obliquedirection with respect to a normal line of a surface of the base member.For example, in a case where the light incident on the base member froman oblique direction is polarized, it is possible to reduce a ratio ofpolarized light, passing through the pixels, in which the polarizationdirection thereof is changed by being reflected by the second reflectivefilm.

In the substrate for an electro-optical device according to theapplication example, the second reflective film may be formed fromtitanium nitride, and the thickness of the second reflective film may beequal to or greater than 50 nm.

In this configuration, it is possible to set reflection of visible lightincident on the second reflective film to equal to or less than 50%.

The substrate for an electro-optical device according to the applicationexample, may further include a transparent second protective film thatcovers the light shielding portion, and is provided over at least aregion including the plurality of pixels.

In this configuration, it is possible to protect the second reflectivefilm by a second protective film. In addition, since the secondprotective film has transmissivity, even in a case where the secondprotective film is provided over a region including a plurality ofpixels, it is possible to suppress the reduction of the transmissivityof the pixels.

In the substrate for an electro-optical device according to theapplication example, it is preferable that the first protective film andthe second protective film is formed from the same material.

In this configuration, it is possible to ensure the adhesion betweenprotection films compared to a case where the first protective film andthe second protective film are formed by different material. Inaddition, it is possible to form the first protective film and thesecond protective film by using the same film forming method or filmforming apparatus, and improve productivity.

In the substrate for an electro-optical device according to theapplication example, a sectional shape of the light shielding portion onthe base member may be a trapezoidal shape of which a bottom is formedfrom the first reflective film.

In this configuration, it is possible to effectively pass through lightincident on the base member from an oblique direction with respect to anormal line of a surface of the base member.

In the substrate for an electro-optical device according to theapplication example, the light shielding portion may be provided topartition each of the plurality of pixels on the base member, andinclude a colored layer of a color filter which is provided to fill atleast an opening portion partitioned by the light shielding portion.

In this configuration, it is possible to suppress unwanted reflection oflight by the second reflective film, and provide a color filtersubstrate as the substrate for an electro-optical device havingexcellent optical characteristics.

The substrate for an electro-optical device according to the applicationexample may further include a transparent planarization layer thatcovers the light shielding portion and the colored layer; and atransparent conductive film that covers the planarization layer.

In this configuration, it is possible to provide the color filtersubstrate as the substrate for an electro-optical device havingexcellent optical characteristics which can use the transparentconductive film, as electrodes, having a flat surface.

Application Example

According to this application example, there is provided anelectro-optical device including the substrate for an electro-opticaldevice according to the application example.

In this application example, it is possible to provide theelectro-optical device having excellent optical characteristics.

Application Example

According to this application example, there is provided an electronicapparatus including the electro-optical device according to theapplication example.

In this application example, it is possible to provide the electronicapparatus having excellent display.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a schematic plan view illustrating a configuration of a liquidcrystal device according to a first embodiment.

FIG. 2 is an enlarged view illustrating an arrangement of sub-pixels anda light shielding portion in a display region.

FIG. 3 is an equivalent circuit diagram illustrating an electricalconfiguration of the liquid crystal device.

FIG. 4 is a sectional view of a liquid crystal panel taken along lineIV-IV of the display region illustrated in FIG. 2.

FIG. 5 is an enlarged sectional view illustrating a structure of thelight shielding portion and a colored layer on an opposing substrate.

FIG. 6 is a flow chart illustrating a method for manufacturing anopposing substrate.

FIG. 7 is a schematic sectional view illustrating the method formanufacturing an opposing substrate.

FIG. 8 is a schematic sectional view illustrating the method formanufacturing an opposing substrate.

FIG. 9 is a schematic sectional view illustrating the method formanufacturing an opposing substrate.

FIG. 10 is a schematic sectional view illustrating the method formanufacturing an opposing substrate.

FIG. 11 is a schematic sectional view illustrating the method formanufacturing an opposing substrate.

FIG. 12 is a schematic sectional view illustrating the method formanufacturing an opposing substrate.

FIG. 13 is a schematic sectional view illustrating the method formanufacturing an opposing substrate.

FIG. 14 is a schematic sectional view illustrating the method formanufacturing an opposing substrate.

FIG. 15 is a schematic sectional view illustrating the method formanufacturing an opposing substrate.

FIG. 16 is a schematic sectional view illustrating the method formanufacturing an opposing substrate.

FIG. 17 is a graph illustrating a relationship between the thickness anda reflection rate of titanium nitride.

FIG. 18 is a schematic sectional view illustrating a method formanufacturing an opposing substrate of a comparison example.

FIG. 19 is a schematic plan view illustrating an arrangement of pixelsand a light shielding portion in a display region of a liquid crystaldevice of a second embodiment.

FIG. 20 is a schematic sectional view illustrating a structure of theliquid crystal panel of the second embodiment taken along line XX-XX ofFIG. 19.

FIG. 21 is an enlarged sectional view illustrating a structure of thelight shielding portion on an element substrate of the secondembodiment.

FIG. 22 is a schematic view illustrating a configuration of a digitalcamera as an electronic apparatus.

FIG. 23 is a schematic view illustrating a configuration of aprojection-type display device as another electronic apparatus.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, an embodiment of the invention will be described withreference to the drawings. The drawings to be used are illustrated byappropriately enlarging or reducing them such that a description becomesa recognizable state.

First Embodiment

Electro-Optical Device

As an example of an electro-optical device of the embodiment, a liquidcrystal device will be described with reference to FIG. 1 to FIG. 3.FIG. 1 is a schematic plan view illustrating a configuration of theliquid crystal device according to a first embodiment. FIG. 2 is anenlarged view illustrating an arrangement of sub-pixels and a lightshielding portion in a display region. FIG. 3 is an equivalent circuitdiagram illustrating an electrical configuration of the liquid crystaldevice.

As illustrated in FIG. 1, the liquid crystal device 100 as theelectro-optical device according to the embodiment is an activedrive-type display device having a display region E on which a pluralityof sub-pixels are disposed in a matrix shape.

The liquid crystal device 100 includes a liquid crystal panel 120pinched by a liquid crystal layer 50 (see FIG. 4) between an elementsubstrate 10 and an opposing substrate 20 which are oppositely disposedthrough sealing material 40 disposed in a frame shape. In addition, theliquid crystal device 100 includes a flexible printed circuit(hereinafter, referred to as FPC) 110 attached to a terminal portion 10a of the liquid crystal panel 120.

Hereinafter, in the description, an X axis direction is a directionalong a side to which the FPC 110 of the liquid crystal panel 120 isattached, a Y axis direction is a direction along the other two sidesperpendicular to the sides and opposite to each other, and a Z directionis a thickness direction of the liquid crystal panel 120 perpendicularto the X axis direction and the Y axis direction. In addition, a viewfrom the opposing substrate 20 side in the Z direction is represented asa plane or a planar view.

The element substrate 10 includes the display region E on which aplurality of sub-pixels are arranged in the X axis direction and the Yaxis direction in a matrix shape, a driving circuit (data line drivingcircuit 101 and scan line driving circuit 102) for driving thesub-pixels, an inspection circuit 103, and the like. The scan linedriving circuit 102 is disposed between an outer edge (side) extendingin the Y axis direction of the element substrate 10 and the displayregion E. The data line driving circuit 101 is disposed between a sideto which the FPC 110 of the element substrate 10 is attached and thedisplay region E. The inspection circuit 103 is disposed between a sideextending along the X axis direction in the Y axis (+) direction side ofthe element substrate 10 and the display region E.

A side of the element substrate 10 is protruded from the opposingsubstrate 20, and the FPC 110 is attached to the protruded terminalportion 10 a. A driving IC 111 is mounted on the FPC 110, and signalsfor driving the data line driving circuit 101, the scan line drivingcircuit 102, and the inspection circuit 103 are supplied to the elementsubstrate 10.

The liquid crystal panel 120 is a display body capable of being in fullcolor display, and a color filter 26 including colored layers 26R, 26G,and 26B of red (R), green (G), and blue (B) is disposed on the opposingsubstrate 20 (see FIG. 4). The opposing substrate 20 is an example ofthe “the substrate for an electro-optical device” in the invention.

As illustrated in FIG. 2, sub-pixels SR corresponding to red (R),sub-pixels SG corresponding to green (G), and sub-pixels SBcorresponding to blue (B) are disposed on the display region E in thematrix shape. Specifically, the sub-pixels SR, SG, and SB of differentcolors are arranged in the X axis direction, the sub-pixels of the samecolor are arranged in the Y axis direction. The method of thearrangement of the sub-pixels SR, SG, and SB is referred to as a stripemethod. In addition, each of the sub-pixels SR, SG, and SB ispartitioned by a light shielding portion 25. That is, the lightshielding portion 25 for partitioning the sub-pixels SR, SG, and SB bycolor is arranged in a lattice shape on the display region E.

These three sub-pixels SR, SG, and SB become a display unit of aschematically square shape in a plan view, and provide full colordisplay. The invention is not limited to the color arrangement of thesub-pixels SR, SG, and SB of the stripe method described above, and maybe, for example, another color arrangement (mosaic arrangement and deltaarrangement) in the Y axis direction. In addition, the display unit mayinclude sub-pixels of another color (for example, yellow) other than thethree sub-pixels SR, SG, and SB.

The liquid crystal device 100 is a transmissive type device, and adoptsan optical design of a normally white mode in which the sub-pixels SR,SG, and SB are brightly displayed at the time of non-driving and anormally black mode in which the sub-pixels SR, SG, and SB are darklydisplayed at the time of the non-driving. In addition, polarizationplates are disposed and used in each of an incident side and an emissionside of light of the liquid crystal panel 120 according to the opticaldesign.

As illustrated in FIG. 3, the liquid crystal device 100 includes aplurality of scan lines 31, a plurality of data lines 32, and aplurality of capacitance lines 33 which are insulated from andperpendicular to one another on at least the display region E. On thedisplay region E, the scan lines 31 and the capacitance lines 33 areextended in the X axis direction, and the data lines 32 are extended inthe Y axis direction.

A region that is partitioned by the scan lines 31, the capacitance lines33, and the data lines 32 becomes the sub-pixels. Each of the sub-pixelsSR, SG, and SB includes pixel electrodes 15, thin film transistors(hereinafter, referred to as TFT) 30, retention capacitors 34, and thelike.

The scan line 31 is electrically connected to a gate electrode of theTFT 30, and the data line 32 is electrically connected to a sourceelectrode of the TFT 30. The pixel electrode 15 is electricallyconnected to a drain electrode of the TFT 30.

The data line 32 is connected to the data line driving circuit 101 (seeFIG. 1), and image signals D1, D2, . . . , and Dn from the data linedriving circuit 101 are supplied to the sub-pixels. The scan lines 31are connected to the scan line driving circuit 102 (see FIG. 1), andscan signals SC1, SC2, . . . , and SCm from the scan line drivingcircuit 102 are supplied to the sub-pixels.

The image signals D1 to Dn may be supplied from the data line drivingcircuit 101 to the data lines 32 in order using a line sequentialmanner, or may be supplied for each group to a plurality of data lines32 that are adjacent to each other. The scan signals SC1, SC2, . . . ,and SCm are line-sequentially supplied from the scan line drivingcircuit 102 to the scan lines 31 in a pulsed manner using a linesequential manner at a predetermined timing.

The liquid crystal device 100 is configured to write image signals D1 toDn supplied from the data lines 32 in the pixel electrodes 15 when theTFT 30 that is a switching element is in a turned on state for apredetermined period by inputting the scan signals SC1 to SCm.Accordingly, image signals D1 to Dn of a predetermined level written inthe liquid crystal layer 50 through the pixel electrodes 15 are held fora predetermined period between the pixel electrodes 15 and opposingelectrodes 28 opposite to the pixel electrodes 15 through the liquidcrystal layer 50.

In order to prevent the leakage of the held image signals D1 to Dn, theretention capacitor 34 is connected in parallel to a liquid crystalcapacitor formed between the pixel electrodes 15 and the opposingelectrodes 28. The retention capacitor 34 is provided between a drainelectrode of the TFT 30 and the capacitance lines 33.

The data lines 32 are connected to the inspection circuit 103illustrated in FIG. 1, and configured to be able to confirm operationdefects or the like of the liquid crystal device 100 by detecting theimage signal in the manufacturing process of the liquid crystal device100. However, the configuration is omitted in an equivalent circuit ofFIG. 3.

In addition, the inspection circuit 103 may include a sampling circuitthat supplies a sampled signal obtained by sampling the image signal tothe data lines 32, and a precharge circuit that supplies a prechargesignal of a predetermined voltage level before the image signal to thedata lines 32.

Overview of Liquid Crystal Panel

Next, an overview of the liquid crystal panel will be described withreference to FIG. 4 and FIG. 5. FIG. 4 is a sectional view of the liquidcrystal panel taken along line IV-IV of a display region illustrated inFIG. 2. FIG. 5 is an enlarged sectional view illustrating a structure ofthe light shielding portion and a colored layer on the opposingsubstrate.

As illustrated in FIG. 4, the liquid crystal panel 120 includes theelement substrate 10 and the opposing substrate 20 which are spaced inthe Z axis direction, and the liquid crystal layer 50 to which liquidcrystal is filled between the element substrate 10 and the opposingsubstrate 20.

The pixel electrodes 15 and the alignment film 18 are sequentiallylaminated in the Z axis (+) direction of the base member 11 of theelement substrate 10.

For example, the base member 11 of the element substrate 10 uses atransparent substrate such as quartz, alkali-free glass, and the like.As described above, the TFT 30, the scan lines 31, the data lines 32,the capacitance lines 33, the retention capacitor 34, the data linedriving circuit 101, the scan line driving circuit 102, the inspectioncircuit 103, lines that electrically connect these items, and the likeare formed on the base member 11 by known technology. The TFT 30, thescan lines 31, the data lines 32, the capacitance lines 33, and theretention capacitor 34 are provided between adjacent pixel electrodes15, that is, between sub-pixels. In FIG. 4, from a side near the pixelelectrodes 15, the capacitance lines 33 and the data lines 32 aredisplayed.

The pixel electrodes 15 are formed by using a transparent conductivefilm such as an indium tin oxide (ITO) film, and the like. An alignmentfilm 18 covers the pixel electrodes 15, and is disposed over at leastthe display region E.

In the Z axis (−) direction of the base member 21 of the opposingsubstrate 20, the light shielding portion 25, the color filter 26, anovercoat layer (hereinafter, referred to as OC layer) 27 as aplanarization layer, the opposing electrodes 28, and the alignment film29 are sequentially laminated.

The base member 21 is configured by the transparent substrate such asquartz, alkali-free glass, and the like, similar to the base member 11,such that light passes through. The light shielding portion 25 isconfigured to include a first reflective film 22 having lightreflectivity, and a second reflective film 24, which is disposed to beoverlapped with the first reflective film 22, having a reflection ratelower than that of the first reflective film 22.

For example, aluminum, aluminum alloy, silver, silver alloys, tungstensilicide, or the like can be used in the first reflective film 22. Forexample, metal nitride, tungsten silicide, or the like can be used inthe second reflective film 24. In the embodiment, the first reflectivefilm 22 is formed by using the aluminum alloy, and the second reflectivefilm 24 is formed by using titanium nitride (TiN).

In addition, in the embodiment, a first protective film 23 a that coversthe first reflective film 22 is provided between the first reflectivefilm 22 and the second reflective film 24. In addition, a secondprotective film 23 b that covers the second reflective film 24 isprovided. Theses protective films 23 a and 23 b are disposed over thedisplay region E on which at least a plurality of the pixel electrodes15 are disposed. These protective films 23 a and 23 b have approximatelythe same refractive rate (n=1.46 to 1.50) as the base member 21, and forexample, are formed so as to have translucency by using silicon oxide orthe like. The first protective film 23 a and the second protective film23 b may be formed by using the same material, or the first protectivefilm 23 a and the second protective film 23 b may be formed by usingdifferent material.

The color filter 26 includes the colored layer that converts white lightinto color light of a predetermined wavelength range. In addition, thecolored layer is disposed to fill a region between the light shieldingportions 25 that are adjacently disposed. First, on the display region Eillustrated in FIG. 2, the colored layer 26R of red (R) is disposed inthe sub-pixels SR, the colored layer 26G of green (G) is disposed insub-pixels SG, and the colored layer 26B of blue (B) is disposed in thesub-pixels SB. In a top portion side of the light shielding portion 25of which a sectional shape is trapezoidal, a top portion thereof iscovered by overlapping the colored layers having different colors. Asdescribed above, in a case where the display unit includes sub-pixelsother than red (R), green (G), and blue (B), the colored layer isdisposed other than red (R), green (G), and blue (B) corresponding tothe sub-pixels.

A surface of the color filter 26 includes unevenness depending on aforming method of the colored layers 26R, 26G, and 26B. Therefore, byconsidering the effect of the unevenness on the liquid crystal layer 50in order to alleviate the unevenness, the OC layer 27 that covers thecolor filter 26 is provided.

For example, the OC layer 27 is formed by acrylic transparent resin, theplanarization processing such as chemical mechanical polishing (CMP),and the like is performed on a surface thereof. The planarizationprocessing is not essential. It is possible to implement planarizationon the surface of the OC layer 27 according to the degree of theunevenness and a formation method of the OC layer 27 on the surface ofthe color filter 26.

The opposing electrodes 28 are configured by using a transparentconductive film such as an indium tin oxide (ITO) film, or the like,similar to the pixel electrodes 15. The alignment film 29 covers theopposing electrodes 28, and is disposed over at least the display regionE.

As the alignment film 18 that covers the pixel electrodes 15 and thealignment film 29 that covers the opposing electrodes 28, which are incontact with the liquid crystal layer 50, for example, an organicalignment film such as polyimide or the like on which alignmentprocessing that approximately horizontally aligns liquid crystalmolecules having positive dielectric anisotropy in a predetermineddirection is performed, and, for example, an inorganic alignment filmsuch as silicon oxide or the like on which liquid crystal moleculeshaving negative dielectric anisotropy, and the like are approximatelyvertically aligned in the predetermined direction can be used.

As illustrated in FIG. 4, in the embodiment, white light emitted from alight source is incident from the opposing substrate 20 side, andemitted as display light by passing through the color filter 26, theliquid crystal layer 50, and the element substrate 10. The white lightpassed through the colored layer 26R of the color filter 26 is convertedinto red light, the white light passed through the colored layer 26G isconverted into green light, and the white light passed through thecolored layer 26B is converted into blue light. In addition, the whitelight incident on the light shielding portion 25, especially, the firstreflective film 22 is reflected.

In addition, as described above, since the polarization plate isdisposed on an incident side of light of the liquid crystal panel 120 onthe basis of optical design, by passing the white light incident on theliquid crystal panel 120 through the polarization plate, the white lightis converted into linear polarized light. The linear polarized lightincident from the opposing substrate 20 side is not necessarily incidentfrom the normal line direction with respect to an incidence plane of theopposing substrate 20.

In the embodiment, as described in FIG. 5, the first reflective film 22is configured to implement a sectional view of the first reflective film22 as a trapezoid in a surface opposite to an incident surface of lightof the base member 21. The second reflective film 24 is formed by atrapezoid similar to the first reflective film 22 disposed at a positionthat is overlapped with the first reflective film 22. In addition, thesecond reflective film 24 is provided to slightly protrude from a regionwhere the first reflective film 22 is provided, and includes the eavesportion 24 a protruded between the adjacent light shielding portions 25.Therefore, a part of the linear polarized light obliquely incident onthe eaves portion 24 a with respect to the normal line direction isreflected and absorbed by the eaves portion 24 a. In addition, a part ofthe linear polarized light incident on an inclined surface of the secondreflective film 24 of a trapezoidal shape is also reflected andabsorbed. In particular, the linear polarized light reflected from theinclined surface of the second reflective film 24 may cause unevennessin a polarization state of the green light passing through the liquidcrystal layer 50 between the pixel electrodes 15 and the opposingelectrodes 28, after passing through the colored layer 26G due tovariation of a direction of the polarization axis according to thereflection. That is, the linear polarized light may affectcharacteristics such as contrast or the like in display. In theembodiment, since the second reflective film 24 is formed by usingmaterial having a low reflection rate compared to the first reflectivefilm 22, it is possible to reduce a rate of the linear polarized lightin which the direction of the polarization axis is varied by reflectingthe linear polarized light in the inclined surface of the secondreflective film 24. In other words, the unevenness in the polarizationstate of the green light can be reduced. FIG. 5 is a diagram enlarging aportion to which the colored layer 26G is provided. However, similar toa portion to which other colored layers 26R and 26B are provided, theunevenness in the polarization state of the red light and the greenlight can also be reduced.

Method for Manufacturing Substrate for Electro-Optical Device

Next, a method for manufacturing the opposing substrate 20 as thesubstrate for an electro-optical device of the embodiment will bedescribed with reference to FIG. 6 to FIG. 17. FIG. 6 is a flow chartillustrating a method for manufacturing the opposing substrate. FIG. 7to FIG. 16 are schematic sectional views illustrating the method formanufacturing the opposing substrate. FIG. 17 is a block illustrating arelationship between the thickness and the reflection rate of titaniumnitride.

As described in FIG. 6, the method for manufacturing the opposingsubstrate 20 of the embodiment includes a first reflective film formingprocess (step S1), a first protective film forming process (step S2), asecond reflective film forming process (step S3), a second protectivefilm forming process (step S4), a colored layer forming process (stepS5), an OC layer forming process (step S6), and a transparent conductivefilm forming process (step S7).

In the first reflective film forming process of step S1, as described inFIG. 7, first, for example, the reflective film 22 m of aluminum alloyis formed on the base member 21, by using a film forming method such assputtering and evaporation. The thickness of the reflective film 22 mis, for example, 1.0 μm to 1.5 μm (micrometer). In the embodiment, thecolored layer is formed in a region surrounded later by the lightshielding portion 25. Since optical characteristics (transmissivity,chromaticity, and chroma) of the colored layer depend on the thicknessof the colored layer, the thickness of the reflective film 22 m is setby considering the thickness based on the optical characteristics of thecolored layer. Subsequently, a resist pattern 60 is formed in a positioncorresponding to the first reflective film 22 by performing exposure anddevelopment on which, for example, a photosensitive resist is formed onthe reflective film 22 m. The photosensitive resist may be used one of apositive type and a negative type, and is formed by applying and dryingphotosensitive resist liquid, for example, by a spin coating method andthe like. The thickness of the photosensitive resist is, for example,approximately 2 μm. Accordingly, the reflective film 22 m on which theresist pattern 60 is formed is etched. As the etching method, forexample, there are a wet etching using an etching solution includingphosphoric acid, nitric acid, and the like, and a dry etching usingprocessing gas including boron trichloride gas (BCl₃), chlorine gas(Cl₂), and the like. The thickness of the reflective film 22 m is athickness in units of micrometers. When etching is performed on thereflective film 22 m, as described in FIG. 8, the first reflective film22 of which a sectional shape is patterned in a trapezoidal shape isobtained. The length of the base of the first reflective film 22 of thetrapezoid, that is, the width of the first reflective film 22 is, forexample, 1.0 μm to 1.5 μm. An arrangement pitch of the adjacent firstreflective films 22 is the same as that of the sub-pixels, for example,approximately 3 μm. As material of the first reflective film 22,aluminum having a higher reflection rate than that of aluminum alloy maybe used. In processing after this, in a case of the heating of equal toor greater than 350° C., since hillock (hemispherical protrusion) iseasily generated on a surface of an aluminum film, it is preferable touse aluminum alloy including metal such as Si and Cu which easilygenerate the hillock. In addition, after etching the reflective film 22m, a peeling process for removing the resist pattern 60 is performed. Asthe peeling method of the resist pattern 60, for example, there is amethod using a peeling solution of an organic alkali system.Accordingly, the process proceeds to step S2.

In the first protective film forming process of step S2, as described inFIG. 9, the first protective film 23 a is formed to cover a surface ofthe base member 21 on which the first reflective film 22 is formed. As aforming method of the first protective film 23 a, there is a method forforming a SiO_(x) film (silicon oxide film) by a plasma CVD method usingprocessing gas including, for example, monosilane (SiH₄) and nitrousoxide gas (N₂O). The thickness of the first protective film 23 a is, forexample, 60 nm (nanometer). Accordingly, process proceeds to step S3.

In the second reflective film forming process of step S3, as describedin FIG. 10, first, by using the sputtering, the evaporation, or the liketo cover the first protective film 23 a, for example, the reflectivefilm 24 m of TiN is formed. For example, the thickness of the reflectivefilm 24 m is 150 nm. The reflection rate of the reflective film 24 m ofTiN lower than the reflection rate of the first reflective film 22 isconfigured. As described in a graph of FIG. 17, the thickness of TiN isapproximately 20 nm. However, a reflection rate in the wavelength oflight shorter than 500 nm is equal to or less than 30%, and a reflectionrate exceeds 50% when the wavelength is equal to or greater than 600 nm.As the embodiment, since the thickness of TiN is approximately 150 nm,it is possible to set a reflection rate of a visible light wavelengthrange (450 nm to 700 nm) to less than 50%. In view of setting thereflection rate of the visible light wavelength range (450 nm to 700 nm)to equal to or less than 50%, as illustrated in a graph of FIG. 17, thethickness of TiN is required for setting at least 50 nm. The reflectionrate of a graph illustrated in FIG. 17 is a reflection rate at the timeof setting the reflection rate of aluminum film to 100%.

Subsequently, similar to the first reflective film forming process, aresist pattern 70 is formed at a position corresponding to the secondreflective film 24 by performing exposure and development in which thephotosensitive resist is formed on the reflective film 24 m. Similarly,the thickness of the photosensitive resist is, for example,approximately 2 μm. Accordingly, the reflective film 24 m on which theresist pattern 70 is formed is etched. As the etching method, forexample, there are wet etching using fluorine-based etching solution anddry etching using processing gas including chlorine gas and nitrogengas. In the wet etching, since it is difficult to control the etching soas to not perform the etching on the first protective film 23 a of alower layer of the reflective film 24 m, the reflective film 24 m isetched by using the dry etching that easily controls the etching in theembodiment. Subsequently, the peeling process for removing the resistpattern 70 is performed. The peeling process is the same as that of theresist pattern 60 described above. With this, as described in FIG. 11,the second reflective film 24 is formed at a position on which thesecond reflective film 24 is overlapped with the first reflective film22 through the first protective film 23 a. With this, the lightshielding portion 25 including the first reflective film 22 and thesecond reflective film 24 is formed. Accordingly, the process proceedsto step S4.

In the second protective film forming process of step S4, as describedin FIG. 12, second protective film 23 b is formed to cover a surface ofthe base member 21 on which the light shielding portion 25 is formed. Amethod of forming the second protective film 23 b forms the SiO_(x) filmby the plasma CVD method, similar to the first protective film 23 a. Forexample, the thickness of the second protective film 23 b is 50 nm. Inthe embodiment, since light incident between adjacent light shieldingportions 25 passes through the colored layer, it is necessary to securetranslucency over a visible light wavelength region for the firstprotective film 23 a and the second protective film 23 b formed anddeposited between the adjacent light shielding portions 25. Therefore,it is preferable to adjust each wavelength thereof in order to set thetotal of the thickness of the first protective film 23 a and the secondprotective film 23 b to equal to or less than 110 nm where it isdifficult to generate the absorption and reflection of light in aspecific wavelength, after laminating the first protective film 23 a andthe second protective film 23 b. In the embodiment, the “translucency”refers to characteristics that light of the visible light wavelengthrange passes through at least equal to or greater than 85%. Accordingly,process proceeds to step S5.

In the colored layer forming process of step S5, as described in FIG.13, first, a photosensitive color resist layer 80G is formed on the basemember 21 on which the light shielding portion 25 and the secondprotective film 23 b are formed. Specifically, for example, thephotosensitive color resist layer 80G is formed by coating and dryingnegative type photosensitive color resist liquid including green colormaterial by using the spin coating method so as to fill thephotosensitive color resist layer 80G between the light shieldingportions 25 with the photosensitive color resist liquid. Thephotosensitive color resist layer 80G is exposed by using a mask 90including an opening portion 91 corresponding to a formation region ofthe colored layer 26G. In the development process, since thephotosensitive color resist layer 80G in a portion that is exposedremains, as described in FIG. 14, the colored layer 26G of green (G) isformed in a colored layer formed region 25 a between the adjacent lightshielding portions 25. In the embodiment, the thickness of thephotosensitive color resist layer 80G is greater than that of the heightof the light shielding portion 25 of the second protective film 23 bthat is covered on the base member 21. The colored layer 26G is formedsuch that an end portion of the colored layer 26G is formed on the lightshielding portion 25 that is covered by the second protective film 23 b.Hereinafter, similar to the colored layer 26G, as described in FIG. 15,the colored layer 26R and the colored layer 26B are sequentially formed.With this, the color filter 26 including the colored layers 26R, 26G,and 26B is formed. However, sequential formation of the colored layers26R, 26G, and 26B is not limited to being formed in the order of green(G), red (R), and blue (B). In addition, the thickness of the coloredlayers 26R, 26G, and 26B may be different. As described above, byconsidering the optical characteristics of the color filter 26, thethickness of each of the colored layers 26R, 26G, and 26B is set. Inaddition, the colored layer may be formed by coating and drying asolution including a desired color of a colored layer forming materialon the colored layer formed region 25 a, through an ink jet method(droplet discharge method), without limiting a method for coating thephotosensitive color resist solution by the spin coating method, basedon the size of the sub-pixels, that is, the size of the colored layerformed region 25 a. In addition, the photosensitive color resistsolution is not limited to the negative type, and may be the positivetype. Accordingly, the process proceeds to step S6.

In the OC layer forming process of step S6 and the transparentconductive film forming process of step S7, as described in FIG. 16,first, the OC layer 27 is formed by coating and drying a solutionincluding, for example, acrylic transparent resin through the spincoating method in order to cover the color filter 26. The planarizationprocessing for planarizing the surface of the formed OC layer 27 such asCMP processing may be performed according to an unevenness situation ofa surface of the formed OC layer 27. The OC layer 27 is not limited tobeing formed by using organic material. For example, the OC layer 27 maybe formed by using inorganic material such as a silicon compound.Accordingly, through the sputtering, the evaporation, and the like, theopposing electrodes 28 are formed by forming the transparent conductivefilm, for example, the ITO film, or the like on the OC layer 27. Thethickness of the opposing electrodes 28 is, for example, approximately200 nm. Then, the alignment film 29 that covers the opposing electrodes28 is formed, and the opposing substrate 20 is formed.

Next, the opposing substrate 20 of the embodiment and a method formanufacturing thereof will be described with reference to FIG. 18. FIG.18 is a schematic sectional view illustrating a method for manufacturingan opposing substrate of a comparison example.

As described in FIG. 18, as the method for manufacturing the opposingsubstrate of the comparison example, for example, the reflective film 24m is formed to cover the first reflective film 22 without forming thefirst protective film 23 a, after forming the first reflective film 22.Accordingly, it is considered to perform a patterning method by whichthe resist pattern 70 is formed and the reflective film 24 m is etched.At this time, when a part of the reflective film 24 m that covers aninclined surface of, for example, a trapezoidal shape of the firstreflective film 22, is exposed, by deviating a position of the resistpattern 70 with respect to the first reflective film 22, the reflectivefilm 24 m of a portion that is exposed is etched. Since it is preferablethat the thickness of the reflective film 24 m is at least equal to orgreater than 50 nm as described above, when proceeding with the dryetching, there is a possibility that a defect is generated by partiallyetching the first reflective film 22.

In addition, the reflective film 24 m is etched in the dry etching.However, even in a case where processing gas is selected without etchingthe first reflective film 22, when a peeling solution of organic alkalisystem for removing the resist pattern 70 is used, and a portion of thefirst reflective film 22 on which the reflective film 24 m is etched andexposed, there is a possibility that a defect caused by dissolving theportion according to the usage of the peeling solution is generated.Then, a part of the linear polarized light incident from an inclineddirection with respect to the base member 21 illustrated in FIG. 5, isincident on a defect portion of the first reflective film 22 illustratedin FIG. 18, and then the part of the linear polarized light isscattered. That is, an effect suppressing the scattering of the linearpolarized light is partially lost by providing the second reflectivefilm 24 having a reflection rate lower than that of the first reflectivefilm 22.

Particularly, as the embodiment, in a case where the light shieldingportion 25 having a width of 1.0 μm to 1.5 μm is formed, it is difficultto sufficiently secure positional accuracy with respect to the firstreflective film 22 of the resist pattern 70. When the width of theresist pattern 70 is enlarged by considering the positional accuracy ofthe resist pattern 70, there is a possibility that a size of the openingportion of sub-pixels partitioned by the light shielding portion 25decreases, the transmissivity of light passing through the sub-pixels islowered, and a brightness and contrast ratio in the display is reduced.

For this reason, according to the method for manufacturing the opposingsubstrate 20 of the embodiment, the first protective film 23 a thatcovers the first reflective film 22 is formed. That is, since the firstreflective film 22 is protected by the first protective film 23 a, evenin a state where the positional accuracy of the resist pattern 70 is notsufficiently secured, it is possible to partially prevent a defect forthe first reflective film 22, at the time of patterning in thereflective film 24 m.

According to the method for manufacturing the liquid crystal device 100and the opposing substrate 20 of the first embodiment, the followingeffect is obtained.

(1) On the base member 21, the first protective film 23 a is formed tocover the first reflective film 22 of which a sectional shape is atrapezoidal shape. Furthermore, the light shielding portion 25 isconfigured by forming the second reflective film 24 to overlap the firstreflective film 22 in a plan view. The first reflective film 22 isconfigured by using aluminum alloy, and the second reflective film 24 isformed by using titanium nitride (TiN). Therefore, since the reflectionrate of the second reflective film 24 is smaller than that of the firstreflective film 22, it is difficult to reflect a part of the linearpolarized light incident on the inclined surface of the secondreflective film 24. Accordingly, since it is difficult to mix the linearpolarized light, of which the direction of the polarization axis ischanged by reflecting the linear polarized light at an inclined surfaceof the second reflective film 24, to the linear polarized light passingthrough between the adjacent light shielding portions 25, it is possibleto provide the liquid crystal device 100 having good display quality bysuppressing the reduction of contrast in the sub-pixels.

(2) Since the first reflective film 22 is protected by the firstprotective film 23 a, when patterning the second reflective film 24,even in a case where the deviation is generated at a position where thepositional accuracy of the resist pattern 70 is not sufficientlysecured, it is possible to prevent problems that the first reflectivefilm 22 is etched, or dissolved by the peeling solution. That is, it ispossible to effectively manufacture the opposing substrate 20. Inaddition, it is possible to prevent the occurrence of the scattering ofunnecessary linear polarized light in a defect portion of the firstreflective film 22. Furthermore, according to the defect of the firstreflective film 22, it is possible to prevent the generation of defectsof reliability such as material constituting the first reflective film22 is dispersed in the base member 21, the color filter 26, or the like,a display function is lowered by dispersing the material in the liquidcrystal layer 50 according to the lapse of time, or the like.

(3) The second protective film 23 b is formed to cover a surface of thebase member 21 on which the light shielding portion 25 is formed.Therefore, it is possible to improve adhesiveness between the colorfilter 26 and surfaces of the light shielding portion 25 and the basemember 21 on the colored layer formed region 25 a, compared to a casewhere the second protective film 23 b is not formed. In addition, in aforming process of the color filter 26, it is possible to secure thelight shielding portion 25 by the second protective film 23 b. That is,it is possible to effectively manufacture the opposing substrate 20, asthe substrate for an electro-optical device, including the color filter26.

Second Embodiment

Electro-Optical Device

Next, for the electro-optical device of a second embodiment, an exampleof the liquid crystal device will be described with reference to FIG. 19to FIG. 21, similar to the first embodiment. FIG. 19 is a schematic planview illustrating an arrangement of pixels and a light shielding portionin a display region E of a liquid crystal device of a second embodiment.FIG. 20 is a sectional view illustrating a structure of the liquidcrystal panel of the second embodiment taken along line XX-XX of FIG.19. FIG. 21 is an enlarged sectional view illustrating a structure ofthe light shielding portion on an element substrate.

The liquid crystal device 200 as the electro-optical device of thesecond embodiment includes an example of the light shielding portion ofthe invention on the element substrate side without providing the colorfilter 26 on the opposing substrate side, with respect to the liquidcrystal device 100 of the first embodiment. Therefore, the samereference numerals will be attached to the same configuration as theliquid crystal device 100 of the first embodiment such that the detaileddescription thereof will be omitted, and another configuration will bedescribed.

As described in FIG. 19, the liquid crystal device 200 as an electronicapparatus of the embodiment includes a plurality of pixels P disposed ina matrix, in the X axis direction and the Y axis direction on thedisplay region E. Each of the plurality of pixels P is disposed in aregion partitioned by the light shielding portion 215, and a shape ofthe pixels P in a plan view is a square. The light shielding portion 215is disposed in a lattice by extending the light shielding portion 215 inthe X axis direction and the Y axis direction, and constitutes anon-opening region.

A pixel circuit of the pixels P is configured to include the pixelelectrodes 15, the TFT 30, and the retention capacitor 34, similar tothe liquid crystal device 100 of the first embodiment (see FIG. 3). Inaddition, the TFT 30, the scan lines 31 and the data lines 32 connectedto the TFT 30, and retention capacitor 34 and the capacitance lines 33connected to the retention capacitor 34 are formed on the lightshielding portion 215 on which the non-opening region is formed.

As described in FIG. 20, the liquid crystal device 200 includes theliquid crystal panel 230 including the element substrate 210 and theopposing substrate 220 that are opposed by pinching the liquid crystallayer 50. The opposing substrate 220 includes the transparent basemember 21, the opposing electrodes 28 provided on one side of the basemember 21, and the alignment film 29 that covers the opposing electrodes28. The light shielding portion 25 and the color filter 26 such as thefirst embodiment are not provided on the opposing substrate 220.

The element substrate 210 includes the transparent base member 11, thepixel electrodes 15 are provided for each of pixels P provided on onesurface of the base member 11, and the alignment film 18 that covers aplurality of pixel electrodes 15. In addition, the data lines 32, thecapacitance lines 33, or the like described above are provided betweenthe adjacent pixel electrodes 15 of the base member 11. The lightincident from the opposing substrate 220 side is modulated based onimage information by passing through the liquid crystal layer 50 betweenthe pixel electrodes 15 and the opposing electrodes 28, and emitted asdisplay light from the element substrate 210 side. The liquid crystaldevice 200 is preferably used as a light modulation element (liquidcrystal light valve), for example, of a projection-type display device1000 (see FIG. 23) described below. A polarization element is disposedbased on an optical design of the liquid crystal panel 230 on theincident side and the emission side of light of a liquid crystal panel230.

In the embodiment, the capacitance lines 33 that are a wiring linedisposed at a side in vicinity of the pixel electrodes 15 are configuredto function as the light shielding portion 215, in the base member 11.That is, the element substrate 210 is an example of the “substrate foran electro-optical device” of the invention.

Specifically, as described in FIG. 21, the element substrate 210includes the base member 11, the TFT 30 provided on one surface of thebase member 11, a first interlayer insulating film 12 that covers theTFT 30, the data lines 32 provided on the first interlayer insulatingfilm 12, and a second interlayer insulating film 13 that covers the datalines 32. In addition, the element substrate 210 includes thecapacitance lines 33 provided on the second interlayer insulating film13, a third interlayer insulating film 14 that covers the capacitancelines 33, and the pixel electrodes 15 provided on the third interlayerinsulating film 14. On the base member 11, the TFT 30, the data lines32, and the capacitance lines 33 are provided so as to overlap regionsbetween the adjacent pixel electrodes 15.

The capacitance lines 33 include the first wiring portion 33 a as thefirst reflective film provided on the second interlayer insulating film13, an insulating film 33 b as the first protective film that covers thefirst wiring portion 33 a, and a second wiring portion 33 c as thesecond reflective film provided to overlap the second reflective filmwith the first wiring portion 33 a through the insulating film 33 b.That is, the insulating film 33 b as the first protective film isdisposed between the first wiring portion 33 a as the first reflectivefilm and the second wiring portion 33 c as the second reflective film.In other words, the capacitance lines 33 as the light shielding portion215 are configured to include the first wiring portion 33 a, theinsulating film 33 b, and the second wiring portion 33 c.

It is possible to form the first wiring portion 33 a by using, forexample, aluminum, aluminum alloy, silver, silver alloy, tungstensilicide, or the like. For example, it is possible to form the secondwiring portion 33 c by using metal nitride, for example, titaniumnitride, or the like. The insulating film 33 b may be formed to havetranslucency by using, for example, silicon oxide or silicon nitride,may use an oxide aluminum film formed by performing, for example,thermal oxidation treatment on a surface of the first wiring portion 33a formed with aluminum and aluminum alloy. The first wiring portion 33 ais electrically connected to the retention capacitor 34. In addition, acontact hole may be provided in the insulating film 33 b, and the firstwiring portion 33 a and the second wiring portion 33 c may beelectrically connected to each other.

The first interlayer insulating film 12, the second interlayerinsulating film 13, and the third interlayer insulating film 14 are alsoformed to have translucency by using, for example, silicon oxide,silicon nitride, and the like. Therefore, light incident from theopposing substrate 220 side to the pixel electrodes 15 is emitted fromthe base member 11 side by passing through these interlayer insulatingfilms 12, 13, and 14. Meanwhile, light incident between the pixelelectrodes 15 is reflected or absorbed by the second wiring portion 33c. Since the second wiring portion 33 c is formed by using a materialhaving a low reflection rate compared to the first wiring portion 33 a,it is possible to reduce a rate of internal reflection light reflectedat the second wiring portion 33 c. That is, by including the elementsubstrate 210 including the capacitance lines 33 that function as thelight shielding portion 215, it is possible to provide the liquidcrystal device 200 capable of suppressing the reduction of contrastcaused by internal reflection and realizing excellent display quality.In addition, since the first wiring portion 33 a is protected by theinsulating film 33 b, even in a case where position deviates by notsufficiently ensuring the positional accuracy of a register pattern atthe time of patterning of the second wiring portion 33 c, it is possibleto prevent defects such as the first wiring portion 33 a is etched, ordissolved by the peeling solution.

Third Embodiment

Next, an electronic apparatus of the embodiment will be described withreference to FIG. 22 and FIG. 23. FIG. 22 is a schematic viewillustrating a configuration of a digital camera as the electronicapparatus. FIG. 23 is a schematic view illustrating a configuration of aprojection-type display device as another electronic apparatus.

As described in FIG. 22, a digital camera 500 as the electronicapparatus of the embodiment includes a main body 501 having an opticalsystem such as a capturing element, or the like. The monitor 502 thatdisplays a captured image, or the like, and an electronic view finder503 for viewing subjects are provided in the main body 501. The liquidcrystal device 100 according to the first embodiment is mounted in theelectronic view finder 503.

Since the liquid crystal device 100 according to the first embodiment ismounted in the electronic view finder 503, it is possible to provide thedigital camera 500 capable of reducing the internal reflection, havingexcellent display quality, and appropriately viewing the object. Inaddition, it is possible to also apply the liquid crystal device 100 ofthe first embodiment in the monitor 502.

As described in FIG. 23, the projection-type display device 1000 asanother electronic apparatus of the embodiment includes a polarizedillumination apparatus 1100 disposed along a system optical axis L, twodichroic mirrors 1104 and 1105 as a light separating element, threereflecting mirrors 1106, 1107, and 1108, five relay lens 1201, 1202,1203, 1204, and 1205, three transmissive-type liquid crystal lightvalves 1210, 1220, and 1230 as the light modulation element, a crossdichroic prism 1206 as a photosynthesis element, and a projection lens1207.

The polarized illumination apparatus 1100 is schematically configured bya lamp 1101 as a light source of a white light source such as anultra-high pressure mercury lamp, a halogen lamp, and the like, anintegrator lens 1102, and a polarization conversion element 1103.

The dichroic mirror 1104 reflects the red light (R), and absorbs thegreen light (G) and the blue light (B), among polarized light beamsemitted from the polarized illumination apparatus 1100. The otherdichroic mirror 1105 reflects the green light (G) passing through thedichroic mirror 1104, and allows the blue light (B) to pass through.

The red light (R) reflected on the dichroic mirror 1104 is incident onthe liquid crystal light valve 1210 via the relay lens 1205 afterreflecting on the reflecting mirror 1106.

The green light (G) reflected on the dichroic mirror 1105 is incident onthe liquid crystal light valve 1220 via the relay lens 1204.

The blue light (B) passing through the dichroic mirror 1105 is incidenton the liquid crystal light valve 1230 via a light guide system formedby the three relay lens 1201, 1202, and 1203, and the two reflectingmirrors 1107 and 1108.

The liquid crystal light valves 1210, 1220, and 1230 are oppositelydisposed on incident surfaces for respective colors of light of thecross dichroic prism 1206, respectively. The colors of light incident onthe liquid crystal light valves 1210, 1220, and 1230 are modulated basedon image information (image signal), and emitted toward the crossdichroic prism 1206. The prism in which four rectangular prisms areattached, and a dielectric multilayer film that reflects the red lightin an internal surface thereof and the dielectric multilayer film thatreflects the blue light are formed in a cross shape, is configured. Thethree colors of light are combined by these dielectric multilayer films,and light representing a color image is combined. The combined light isprojected on a screen 1300 by the projection lens 1207 that is aprojection optical system, and an image is enlarged and displayedthereon.

The liquid crystal device 200 of the second embodiment is applied to theliquid crystal light valve 1210. The same is also applied to otherliquid crystal light valves 1220 and 1230.

According to the projection-type display device 1000, since the liquidcrystal device 200 is used as the liquid crystal light valves 1210,1220, and 1230, it is possible to provide the projection-type displaydevice 1000 capable of reducing the internal reflection, and projectingimages with excellent display quality.

The electronic apparatus capable of applying the liquid crystal device100 of the first embodiment and the liquid crystal device 200 of thesecond embodiment can be applied to a display unit of various electronicapparatuses such as head-mounted displays (HMD), head-up displays (HUD),mobile computers, digital video cameras, in-vehicle apparatuses, audioapparatuses, information terminal apparatuses, and the like, in additionto the digital camera 500 and the projection-type display device 1000described above.

The invention is not limited to the above-described embodiments, and canbe suitably changed without departing from the gist or spirit of theinvention read from claims and the entirety of the specification. Thesubstrate for an electro-optical device involving such changes, theelectro-optical device and the electronic apparatus to which thesubstrate for an electro-optical device is applied are also includedwithin the technical range of the invention. Various modificationexamples other than the above embodiments can be implemented.Hereinafter, modification examples will be described.

Modification Example 1

In the opposing substrate 20 of the liquid crystal device 100 of thefirst embodiment, the second protective film 23 b that covers the lightshielding portion 25 is not essential. Since the color filter 26 iscovered by the OC layer 27, it is possible to compensate for adhesionwith respect to the base member 21 of the colored layers 26R, 26G, and26B without providing the second protective film 23 b.

Modification Example 2

In the liquid crystal device 100 of the first embodiment, white light isnot limited to being incident from the opposing substrate 20 side. Thewhite light may be incident from the element substrate 10 side. The sameis also applied to the liquid crystal device 200 of the secondembodiment. In a case where light is from the element substrate side,the light shielding portion for shielding the light incident on the TFT30 is provided such that the light is not incident on the TFT 30. Theconfiguration of the light shielding portion of the invention may beapplied to the light shielding portion.

Modification Example 3

In the liquid crystal device 200 of the second embodiment, a wiring linehaving a function of the light shielding portion 215 is not limited tothe capacitance lines 33. For example, a shield layer may be provided ata position in the vicinity of the pixel electrodes 15. In order toprevent the effect of a potential being applied to various wiring lines,or the like provided in a lower layer of the pixel electrodes 15 on apotential to be applied to the pixel electrodes 15, the shield layer,for example, a fixed potential such as a GND potential, and the like isapplied.

Modification Example 4

In the element substrate 10 of the liquid crystal device 100 of thefirst embodiment, the light shielding portion 215 (for example,capacitance lines 33) may be applied in the liquid crystal device 200 ofthe second embodiment. In addition, in the liquid crystal device 200 ofthe second embodiment, the embodiment is not limited to the applicationof the light shielding portion 215 to the element substrate 210, forexample, the light shielding portion 215 of a lattice shape forpartitioning a plurality of pixels P may be provided on the opposingsubstrate 220. With this, it is possible to further reduce the internalreflection.

Modification Example 5

The substrate for an electro-optical device including the lightshielding portion of the invention is not limited to applying to theliquid crystal devices 100 and 200 of a light receiving type. Forexample, it is also possible to apply an organic EL element of anactive-driven type organic EL element including an organic EL element asa light emitting element for each of the pixels P. More specifically, atop emission type organic EL device capable of performing full-colordisplay by disposing the light shielding portion 25 and the color filter26 on the opposing substrate oppositely disposed with respect to theelement substrate on which an organic EL element that emits white lightis provided, a bottom emission type organic EL device in which the lightshielding portion 215 is disposed on the element substrate on which anorganic EL device including a transparent pixel electrode and areflective opposing electrode is provided, or the like may beconsidered.

The entire disclosure of Japanese Patent Application No. 2015-192904,filed Sep. 30, 2015 is expressly incorporated by reference herein.

What is claimed is:
 1. An electro-optical device having a plurality ofpixels including a first pixel and a second pixel adjacent to the firstpixel comprising: a base member; a first color filter disposed over asurface of the base member, the first color filter being included in thefirst pixel; a second color filter disposed over the surface of the basemember, the second color filter being included in the second pixel; afirst reflective film disposed so as to overlap with a region between afirst pixel and a second pixel in plan view, the first reflective filmbeing disposed between the region and the surface of the base member; asecond reflective film disposed to overlap with the first reflectivefilm in plan view, the second reflective film being disposed between theregion and the first reflective film; and a first protective film thatcovers the first reflective film, is provided between the firstreflective film and the second reflective film.
 2. The electro-opticaldevice according to claim 1, wherein the first reflective film includingaluminum.
 3. The electro-optical device according to claim 1, whereinthe first reflective film including silver.
 4. The electro-opticaldevice according to claim 1, wherein the first reflective film includingtungsten.
 5. The electro-optical device according to claim 1, whereinthe second reflective film including titanium.
 6. The electro-opticaldevice according to claim 1, wherein the second reflective filmincluding tungsten.
 7. The electro-optical device according to claim 1,wherein the first reflective film including metal nitride.
 8. Theelectro-optical device according to claim 1, wherein the firstprotective film is formed from a silicon oxide film.
 9. Theelectro-optical device according to claim 1, wherein the secondreflective film includes an eaves portion protruded from a region onwhich the first reflective film is provided, in plan view.
 10. Theelectro-optical device according to claim 1, wherein the thickness ofthe second reflective film is equal to or greater than 50 nm.
 11. Theelectro-optical device according to claim 1, further comprising: asecond protective film that covers the second reflective film, and isprovided over at least a region including the plurality of pixels. 12.The electro-optical device according to claim 11, wherein the firstprotective film and the second protective film are formed from the samematerial.
 13. An electro-optical device having a plurality of pixelsincluding a first pixel and a second pixel adjacent to the first pixelcomprising: a base member; a first color filter disposed over a surfaceof the base member, the first color filter being included in the firstpixel; a second color filter disposed over the surface of the basemember, the second color filter being included in the second pixel; afirst reflective film disposed so as to overlap with a region between afirst pixel and a second pixel in plan view, the first reflective filmbeing disposed between the region and the surface of the base member; asecond reflective film disposed to overlap with the first reflectivefilm in plan view, the second reflective film being disposed between theregion and the first reflective film; and a first protective film thatcovers the first reflective film, is provided between the firstreflective film and the second reflective film, and is in direct contactwith both the first reflective film and the second reflective film. 14.An electro-optical device having a plurality of pixels including a firstpixel and a second pixel adjacent to the first pixel comprising: a basemember; a first color filter disposed over a surface of the base member,the first color filter being included in the first pixel; a second colorfilter disposed over the surface of the base member, the second colorfilter being included in the second pixel; a first reflective filmdisposed so as to overlap with a region between a first pixel and asecond pixel in plan view, the first reflective film being disposedbetween the region and the surface of the base member, the firstreflective film including aluminum; a second reflective film disposed tooverlap with the first reflective film in plan view, the secondreflective film being disposed between the region and the firstreflective film, the second reflective film including titanium; and afirst protective film that covers the first reflective film, is providedbetween the first reflective film and the second reflective film.
 15. Anelectronic apparatus comprising: the electro-optical device according toclaim
 1. 16. An electronic apparatus comprising: the electro-opticaldevice according to claim
 13. 17. An electronic apparatus comprising:the electro-optical device according to claim 14.